unisonic technologies co., ltd 7n80 preliminary power mosfet www.unisonic.com.tw 1 of 6 copyright ? 2011 unisonic technologies co., ltd qw-r502-523.c 7a, 800v n-channel power mosfet ? description the utc 7n80 is an n-channel mode power mosfet using utc?s advanced technology to provide customers with planar stripe and dmos technology. this technology specializes in allowing a minimum on-state resistance and superior switching performance. it also can withstand high energy pulse in the avalanche and commutation mode. the utc 7n80 is universally applied in high efficiency switch mode power supply. ? features * r ds(on) =1.8 ? @v gs =10v * high switching speed * 100% avalanche tested ? symbol 1.gate 3.source 2.drain to-220 1 1 to-220f1 to-263 1 to-220f 1 ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing 7n80l-ta3-t 7N80G-TA3-T to-220 g d s tube 7n80l-tf3-t 7n80g-tf3-t to-220f g d s tube 7n80l-tf1-t 7n80g-tf1-t to-220f1 g d s tube 7n80l-tq2-r 7n80g-tq2-r to-263 g d s tape reel 7n80l-tq2-t 7n80g-tq2-t to-263 g d s tube note: pin assignment: g: gate d: drain s: source
7n80 preliminary power mosfet unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw qw-r502-523.c ? absolute maximum ratings (t c =25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 800 v gate-source voltage v gss 30 v continuous i d 7 a drain current pulsed (note 1) i dm 26.4 a single pulsed (note 2) e as 580 mj avalanche energy repetitive (note 1) e ar 16.7 mj peak diode recovery dv/dt (note 3) dv/dt 4.5 v/ns to-220 /to-263 142 w power dissipation to-220f/ to-220f1 p d 48 w junction temperature t j +150 c storage temperature t stg -55~+150 c note: 1. repetitive rating: pulse width limited by maximum junction temperature 2. l=25mh, i as =6.6a, v dd = 50v, r g =25 ? , starting t j =25c 3. i sd 8a, di/dt 200a/ s, v dd bv dss , starting t j =25c 4. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal data parameter symbol ratings unit junction to ambient ja 62.5 c/w to-220/to-263 0.88 c/w junction to case to-220f / to-220f1 jc 2.6 c/w
7n80 preliminary power mosfet unisonic technologies co., ltd 3 of 6 www.unisonic.com.tw qw-r502-523.c ? electrical characteristics (t c =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =250a 800 v breakdown voltage temperature coefficient bv dss / t j i d =250 a,referenced to 25c 0.93 v/c v ds =800v, v gs =0v 10 a drain-source leakage current i dss v ds =640v, t c =125c 100 a forward v ds =0v ,v gs =30v 100 na gate-source leakage current reverse i gss v ds =0v ,v gs =-30v -100 na on characteristics gate threshold voltage v gs(th) v ds =v gs , i d =250a 3.0 5.0 v drain-source on-state resistance r ds(on) v gs =10v, i d =3.3a 1.4 1.8 ? forward transconductance g fs v ds =50v, i d =3.3a (note 1) 5.5 s dynamic parameters input capacitance c iss 1290 1680 pf output capacitance c oss 120 155 pf reverse transfer capacitance c rss v ds =25v,v gs =0v,f=1.0mhz 10 13 pf switching parameters total gate charge q g 27 35 nc gate-source charge q gs 8.2 nc gate-drain charge q gd v ds =640v, v gs =10v, i d =6.6a (note 1,2) 11 nc turn-on delay time t d(on) 35 80 ns turn-on rise time t r 100 210 ns turn-off delay time t d(off) 50 110 ns turn-off fall time t f v dd =400v, i d =6.6a, r g =25 ? (note 1,2) 60 130 ns source- drain diode ratings and characteristics maximum body-diode continuous current i s 6.6 a maximum body-diode pulsed current i sm 26.4 a drain-source diode forward voltage v sd i s =6.6a, v gs =0v 1.4 v body diode reverse recovery time t rr 650 ns body diode reverse recovery charge q rr v gs =0v, i s =6.6a, di f /dt=100a/ s (note 1) 7.0 c note: 1. pulse test: pulse width 300s, duty cycle 2% 2. essentially independent of operating temperature
7n80 preliminary power mosfet unisonic technologies co., ltd 4 of 6 www.unisonic.com.tw qw-r502-523.c ? test circuits and waveforms 50k ? 300nf dut v ds 10v 12v charge q gs q gd q g v gs v gs 200nf same type as dut 3ma gate charge test circuit gate charge waveforms resistive switching test circuit resistive switching waveforms 10v t p r g dut l v ds i d v dd t p v dd i as bv dss i d (t) v ds (t) time e as = 2 1 li as 2 bv dss bv dss -v dd unclamped inductive switching test circuit unclamped inductive switching waveforms
7n80 preliminary power mosfet unisonic technologies co., ltd 5 of 6 www.unisonic.com.tw qw-r502-523.c ? test circuits and waveforms(cont.) v ds + - dut r g dv/dt controlled by r g i sd controlled by pulse period v dd peak diode recovery dv/d t test circuit & waveforms same type as dut i sd v gs l v gs (driver ) i sd (dut) v ds (dut) d= gate pulse width gate pulse period 10v di/dt body diode reverse current i rm body diode recovery dv/dt v dd v sd body diode forward voltage drop i fm , body diode forward current driver
7n80 preliminary power mosfet unisonic technologies co., ltd 6 of 6 www.unisonic.com.tw qw-r502-523.c utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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